© 2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MBR3035PT - MBR3060PT Rev. 1.8

May 2015

MBR3035PT - MBR3060PT

30 A Schottky Barrier Rectifiers

Features

• Low Power Loss, High Efficiency

• High Surge Capacity

• Metal Silicon Junction, Majority Carrier Conduction

• High Current Capacity, Low Forward Voltage Drop

• Guard Ring for Over-Voltage Protection (OVP)

Applications

• Low-Voltage

• High-Frequency Inverters

• Free Wheeling

• Polarity Protection

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Part Number

Marking

Package

Packing Method

MBR3035PT

MBR3035PT

TO-247 3L

Rail

MBR3045PT

MBR3045PT

MBR3050PT

MBR3050PT

MBR3060PT

MBR3060PT

Symbol

Parameter

Value

Unit

MBR

3035PT

MBR

3045PT

MBR

3050PT

MBR

3060PT

VRRM

Maximum Repetitive Reverse Voltage

35

45

50

60

V

IF(AV)

Average Rectified Forward Current

.375-inch Lead Length

30

A

IFSM

Non-Repetitive Peak Forward Surge

Current: 8.3 ms Single Half-Sine Wave

200

A

TSTG

Storage Temperature Range

-65 to +175

°C

TJ

Operating Junction Temperature Range

-65 to +150

°C

Description

This center-tap Schottky rectifier is optimal for secondary

rectification and free-wheeling applications for high-effi-

ciency DC-DC convertor design, which features very low

forward voltage drop and low leakage current.

TO-3P/TO-247AD

1 23

+

PIN1

PIN3

CASE

PIN2