December 2012

©2012 Fairchild Semiconductor Corporation

FDMS2572 Rev.C4

www.fairchildsemi.com

1

FDMS2572

N-Channel UltraFET Trench® MOSFET

150V, 27A, 47m

Ω

Features

Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A

Max rDS(on) = 53mΩ at VGS = 6V, ID = 4.5A

Low Miller Charge

Optimized efficiency at high frequencies

UIS Capability (Single pulse and Repetitive pulse)

RoHS Compliant

General Description

UItraFET

devices

combine

characteristics

that

enable

benchmark efficiency in power conversion applications.

Optimized for rDS(on), low ESR, low total and Miller gate charge,

these devices are ideal for high frequency DC to DC converters.

Application

Distributed Power Architectures and VRMs

Primary Switch for 24V and 48V Systems

High Voltage Synchronous Rectifier

MOSFET Maximum Ratings T

A = 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

150

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current -Continuous (Package limited)

TC = 25°C

27

A

-Continuous (Silicon limited)

TC = 25°C

27

-Continuous

TA = 25°C

(Note 1a)

4.5

-Pulsed

30

EAS

Single Pulse Avalanche Energy

(Note 3)

150

mJ

PD

Power Dissipation

TC = 25°C

78

W

Power Dissipation

TA = 25°C

(Note 1a)

2.5

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

1.6

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS2572

FDMS2572

Power 56

13’’

12mm

3000 units

G

S

S

S

Pin 1

Power 56 (Bottom view)

D

D

D

D

4

3

2

1

5

6

7

8

G

S

S

S

D

D

D

D