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25CS160-E/OT 数据表(PDF) 4 Page - Microchip Technology |
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25CS160-E/OT 数据表(HTML) 4 Page - Microchip Technology |
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4 / 53 page ![]() 2026 Microchip Technology Inc. and its subsidiaries Preliminary DS20007008B-page 4 25CS160 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (†) VCC...........................................................................................................................................................................6.25V All inputs and outputs w.r.t. VSS ...........................................................................................................0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65°C to +155°C Ambient temperature under bias.............................................................................................................-40°C to +150°C ESD protection on all pins.......................................................................................................................................... 4 kV † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS DC CHARACTERISTICS Electrical Characteristics: Industrial (I): TAMB = -40°C to +85°C VCC = 1.7V to 5.5V Extended (E): TAMB = -40°C to +125°C VCC = 1.8V to 5.5V Extended (H): TAMB = -40°C to +150°C VCC = 2.5V to 5.5V Param. No. Symbol Characteristic Min. Typical Max. Units Test Conditions D001 VIH High-Level Input Voltage VCC X 0.7 — VCC + 1 V D002 VIL Low-Level Input Voltage -0.6 — VCC X 0.3 V D003 VOL Low-Level Output Voltage —— 0.4 V IOL =3.0 mA, VCC =4.5V —— 0.2 V IOL =1.0 mA, VCC =2.5V D004 VOH High-Level Output Voltage VCC - 0.5 — — V IOH =-400µA D005 ILI Input Leakage Current — — ±1 µA CS =VCC, VIN =VSS or VCC D006 ILO Output Leakage Current —— ±1 µA CS =VCC, VOUT =VSS or VCC D007 CINT Internal Capacitance (all inputs and outputs) —— 6 pF TAMB =+25°C, FCLK =1.0 MHz, VCC =5.0V (Note 1) D008 ICCREAD Operating Current —— 5 mA VCC =5.5V, FCLK =20MHz, SO = Open —— 3 mA VCC =4.5V, FCLK =10MHz, SO = Open —— 2 mA VCC =2.5V, FCLK =5MHz, SO = Open D009 ICCWRITE Operating Current —— 3 mA VCC =5.5V —— 2 mA VCC =2.5V D010 ICCS Standby Current —— 10 µA CS =VCC =5.5V,TAMB = +150°C, VIN =VCC or VSS —— 3 µA CS = VCC = 5.5V, TAMB = +125°C, VIN =VCC or VSS —— 1 µA CS = VCC = 5.5V, TAMB = +85°C, VIN =VCC or VSS Note 1: This parameter is not 100% tested but is ensured by characterization. |
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