°C, Vdd = 5V, Vcc = 12V; unless otherwise specified.)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Vcc

Analog/Power supply voltage

range

10.8

12

13.2

V

Vdd

Digital supply voltage range

4.5

5

5.5

V

Idd

Digital supply quiescent current

Output ENABLED

5

mA

Idd

Digital supply quiescent current

Output DISABLED

5

mA

Icc

Power supply quiescent current

Output ENABLED

20

mA

Icc

Power supply quiescent current

Output DISABLED

10

mA

THERMAL SHUT DOWN DATA

Shut down Temperature

135

160

°C

Shut down hysteresys

25

°C

Pre Shut down alarm

115

140

°C

Pre Shut down alarm hysteresys

15

°C

EXTERNAL N-MOSFET GATE DRIVER

Vll

Low level voltage

500

mV

Vhl

High level voltage

Vcc+4

V

Isink

Current sinking capability

4

mA

Isource

Current source capability

0.5

mA

POWER ON RESET AND GATE SPECIFICATION

Digital undervoltage threshold

3.8

4.1

4.45

V

Power undervoltage threshold

8.5

9.25

10.0

V

POR timeout

Cpor = 1

µF

375

500

625

ms

Time delay for POR Active

1

µs

Power supply POR thereshold

Resistance

10

K

Ω

PIN FUNCTIONS (continued)

Pin

Name

Description

26

+12Setpt

+12V Monitor Set Point and filtering

27

Vbemf

Input BEMF from spindle motor for parking circuit.

28

Rpark

Resistor for setting the park voltage.

29

-W_Gate

Write Gate Input.

30

+VCM park

External input for parking. High will activate the park procedure.

31

-Spindle_start

Spindle Start input.

32

+Enable

Input. logic low will disable only the IC.

33

N.C.

Not Connected.

34

Cpgnd

Charge Pump Ground.

35

Gnd

Ground.

36

Out+

Power Amplifier Output.

37

Vcc

+12V Power Supply.

38

C1

Charge Pump Oscillator Output.

39

C2

Input for external Charge Pump Capacitor.

40

Vcp

Output for Charge Pump Storage Capacitor.

41

Vcc

+12V Power Supply.

42

Out-

Power Amplifier Output.

43

Gnd

Ground.

44

Gate Drive

Gate Drive for External Isolation N-MOSFETS.

L6246

4/12