数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

H206N15HDC 数据表(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

部件名 H206N15HDC
功能描述  150V SGT N-Channel MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
网页  http://www.hxkj.hk
标志 HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H206N15HDC 数据表(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

  H206N15HDC Datasheet HTML 1Page - Guangdong Huixin Electronic Technology Co., Ltd. H206N15HDC Datasheet HTML 2Page - Guangdong Huixin Electronic Technology Co., Ltd. H206N15HDC Datasheet HTML 3Page - Guangdong Huixin Electronic Technology Co., Ltd. H206N15HDC Datasheet HTML 4Page - Guangdong Huixin Electronic Technology Co., Ltd. H206N15HDC Datasheet HTML 5Page - Guangdong Huixin Electronic Technology Co., Ltd. H206N15HDC Datasheet HTML 6Page - Guangdong Huixin Electronic Technology Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 2 of 6
Electrical Characteristics ( TJ= 25℃ unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
Test Conditions
V(BR)DSS Drain- Source Breakdown Voltage
150
--
--
V
VGS=0V,ID=250µA
IDSS
Zero Gate Voltage Drain Current (25℃)
--
--
1
µA
VDS=150V,VGS=0V
Zero Gate Voltage Drain Current (100℃)
--
--
100
µA
VDS=150V,VGS=0V
IGSS
Gate to Source Forward Leakage
--
--
100
nA
VGS=20V ,VDS=0V
Gate to Source Reverse Leakage
--
--
-100
VGS=-20V ,VDS=0V
VGS(TH) Gate Threshold Voltage
2
3
4
V
VGS=VDS,ID=250µA
RDS(on) Static Drain- to- Source On-
Resistance
--
3.8
4.3
mΩ
VGS=10V,ID=20A
Dynamic Electrical Characteristics
Ciss
Input Capacitance
--
5230
--
pF
VGS=0V
VDS=75V
f=1MHz
Coss
Output Capacitance
--
745
--
Crss
Reverse Transfer Capacitance
--
11.5
--
Rg
Gate Resistance
--
4
--
Ω
f=1MHz
Qg
Total Gate Charge
--
70
--
nC
VDS=75V
ID=20A
VGS=10V
Qgs
Gate- to- Source Charge
--
20
--
Qgd
Gate-to-Drain(" Miller") Charge
--
10
--
Switching Characteristics
td(ON)
Turn- on Delay Time
--
19
--
nS
VDS=75V
ID=20A
RG=10Ω
VGS=10V
trise
Rise Time
--
24
--
td(OFF) Turn- OFF Delay Time
--
35
--
tfall
Fall Time
--
11
--
Source- Drain Diode Characteristics
VSD
Diode Forward Voltage
--
0.9
--
V
IF=20A,VGS=0V
trr
Reverse Recovery Time
--
120
--
nS
VR=75V,IF=20A
di/dt=100A/µs
Qrr
Reverse Recovery Charge
--
270
--
nC



Html Pages

1 2 3 4 5 6


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com