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ISC012N04LM6 数据表(PDF) 4 Page - Infineon Technologies AG

部件名 ISC012N04LM6
功能描述  OptiMOSTM6Power-Transistor,40V
PDF  12 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

ISC012N04LM6 数据表(HTML) 4 Page - Infineon Technologies AG

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4
OptiMOSTM6Power-Transistor,40V
ISC012N04LM6
Rev.2.0,2021-04-21
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
40
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.3
1.6
2.3
V
VDS=VGS,ID=250µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1.0
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
1.0
1.4
1.2
1.7
m
Ω
VGS=10V,ID=50A
VGS=4.5V,ID=50A
Gate resistance
RG
-
0.75
-
Ω
-
Transconductance
gfs
-
230
-
S
|VDS|
≥2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
1)
Ciss
-
3500
4600
pF
VGS=0V,VDS=20V,f=1MHz
Output capacitance
1)
Coss
-
1200
1600
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
31
54
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
8
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6
Ω
Rise time
tr
-
6
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
18
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6
Ω
Fall time
tf
-
5
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
9.6
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
5.6
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate to drain charge
1)
Qgd
-
6.3
9.5
nC
VDD=20V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
10.3
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
1)
Qg
-
51
64
nC
VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.7
-
V
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
1)
Qg
-
25
33
nC
VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
21
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
1)
Qoss
-
56
74
nC
VDS=20V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



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