HSC08065F datasheet(1/3 Pages) HUIXIN

部件名	HSC08065F

功能描述	650V/8A SiC Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

网页	http://www.hxkj.hk

标志

1 / 3 page

HSC08065F

Features:

• Zero reverse recovery current

• Zero forward recovery voltage

• New thin wafer technology

• Positive temperature coefficient on VF

• Temperature-independent switching

• Excellent surge current capability

• 175°C operating junction temperature

Applications:

• Switch Mode Power Supplies

• Uninterruptible Power Supplies

• Motor drive, PV Inverter, Wind Power Station

V

= 650 V

R R M

(

)

I = 8 A T

≤120

F

C

°C

Q = 21 nC

C

Package TO-220F-2L

650V/8A SiC Schottky Diode

Benefits:

• Replace bipolar with unipolar device

• Reduction of heat sink size

• Parallel devices without thermal runaway

• Essentially no switching losses

Maximum Ratings (

)

T =25

unless otherwise speciﬁed

J

°C

V

Unit

650

70

-55 ~ +175

HSC08065F

V

°C

A

Parameter

Max. Repetitive peak reverse voltage

Surge Peak Reverse Voltage

Max. DC blocking voltage

Operating junction and storage temperature

Non-Repetitive forward surge current

8.3ms half sine wave

Junction to case thermal resistance

Forward current

VRRM

VRSM

VDC

T ,T

J

S T G

Symbols

IFSM

IF

RθJC

°C/W

4.5

IF

www.hxkj.hk

+86-769-23622090

huixin@hxkj.hk

Rev.02

Page 1 of 3

Power dissipation

Ptot

33.3

T

≤ 25°C

J

T

≤ 135°C

J

6.5

8

W

2

1

Pin1

Pin2

Case

Product Name

Package

Marking

HSC08065F

Marking Informatio

TO-220F-2L

n

HSC08065F

Junction to ambient thermal resistance

RθJA

°C/W

80

260

°C

Soldering temperature

Tsold

类似零件编号 - HSC08065F

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