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STPSC4H065DI 数据表(PDF) 5 Page - STMicroelectronics |
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STPSC4H065DI 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() Figure 5. Peak forward current versus case temperature (TO-220AC Ins.) I M (A) 0 8 16 24 32 40 0 25 50 75 100 125 150 175 = 0.1 = 0.3 = 0.5 = 1 = 0.7 T =tp/T tp TC(°C) IM Figure 6. Junction capacitance versus reverse voltage applied (typical values) 0 50 100 150 200 250 0.1 1.0 10.0 100.0 1000.0 F=1 MHz VOSC=30 mVRMS Tj=25 °C VR(V) Cj (pF) Figure 7. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC and DPAK) Zth(j-c) /Rth(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-0 1.E+00 Single pulse tp(s) Figure 8. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC Ins.) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Single pulse Zth(j-c)/Rth(j-c) tp(s) Figure 9. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) IFSM(A) 1.E+01 1.E+02 1.E+03 1.E-05 1.E-04 1.E-03 1.E-02 Ta=25 °C Ta=125 °C tp(s) Figure 10. Total capacitive charges versus reverse voltage applied (typical values) 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 VR (V) Qcj (nC) STPSC4H065 Characteristics (curves) DS9222 - Rev 6 page 5/14 |
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