L6560

L6560A

POWER FACTOR CORRECTOR

VERY PRECISE ADJUSTABLE INTERNAL

OUTPUT OVERVOLTAGE PROTECTION

HYSTERETIC START-UP

VERY LOW QUIESCENT CURRENT

(< 3.5mA)

INTERNAL START-UP TIMER

TRANSITION MODE OPERATING

TOTEM POLE OUTPUT CURRENT:

±400mA

DIP8/SO8 PACKAGES

DESCRIPTION

The L6560/A is a monolithic integrated circuit in

Minidip and SO8 packages, designed as a con-

troller and driver of a discrete power MOS transis-

tor for the implementation of active power factor

correction, for sinusoidal line current consump-

tion.

Realized in mixed BCD technology, the chip inte-

grates:

- An undervoltage lockout with micropower start-

up and hysteresis.

- An internal temperature compensated precise

band gap reference.

- A stable error amplifier.

- One quadrant multiplier.

- Current sense comparator.

- An output overvoltage protection circuit.

- A totem-pole output stage able to drive a

POWER MOS or IGBT devices with source

and sink current of 400mA. The chip works in

transition mode and is particularly intended

for lamp ballast applications and for low

power SMPS.

June 2000

®

BLOCK DIAGRAM

ORDERING NUMBERS:

L6560

L6560D

L6560A

L6560AD

Minidip

SO8

MULTIPOWER BCD TECHNOLOGY

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