Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

Per diode

1

°C/W

Total

0.55

Rth (c)

Coupling

0.1

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode) x Rth(Per diode) + P(diode 2) x Rth(c)

THERMAL RESISTANCES

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25

°CVR = VRRM

1mA

Tj = 125

°C

43

150

VF *

Forward voltage drop

Tj = 25

°CIF = 120 A

0.91

V

Tj = 125

°CIF = 120 A

0.72

0.87

Tj = 125

°CIF = 60 A

0.52

0.67

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Pulse test :

* tp = 380

µs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.47 x IF(AV) + 0.00333 x IF

2

(RMS)

0

25

50

75

100

125

150

0

10

20

30

40

50

60

70

Tamb(°C)

IF(av)(A)

Rth(j-a)=5°C/W

Rth(j-a)=Rth(j-c)

T

δ=tp/T

tp

Fig. 2: Average current versus case temperature

(

δ= 0.5) (per diode).

0

1020304050607080

0

5

10

15

20

25

30

35

40

45

50

55

60

IF(av) (A)

PF(av)(W)

T

δ=tp/T

tp

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

STPS12045TV

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