1E-3

1E-2

1E-1

1E+0

5E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

T

δ=tp/T

tp

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 4: Relative variation of thermal transient

impedance junction to case versus pulse duration

(per diode).

0

5

10

15

20

25

30

35

40

45

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

5E+5

VR(V)

IR(µA)

Tj=150°C

Tj=100°C

Tj=125°C

Tj=75°C

Tj=50°C

Tj=25°C

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

12

5

10

20

50

0.1

1.0

10.0

VR(V)

C(nF)

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

10

100

1000

VFM(V)

IFM(A)

Typical values

Tj=125°C

Tj=125°C

Tj=25°C

Fig. 7:

Forward voltage drop versus forward

current (maximum values, per diode).

1E-3

1E-2

1E-1

1E+0

0

50

100

150

200

250

300

350

400

450

t(s)

IM(A)

Tc=75°C

Tc=100°C

Tc=125°C

IM

t

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

STPS16045TV

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