8

3

BRIDGE

4 x BY255

R9

1.5M

1%

C1

1

µF

250V

R10

16K

1%

C2

22

µF

25V

FUSE 4A/250V

Vac

(85V to 135V)

R3

68K 5%

D3 1N4150

D2

1N5248B

R2

100 5%

10nF

C6

R1 68K 5%

T

5

6

L6560

7

21

C3 330nF

R5 10

MOS

IRF740

R4 330

4

D1 BYT03-400

R7

1.5M

1%

C5

150

µF

315V

Vo=240V

Po=100W

+

-

D94IN050B

TRANSFORMER

T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT

primary 90T of Litz wire 10 x 0.2mm

secondary 11T of #27 AWG (0.15mm)

gap 1.9mm for a total primary inductance of 0.6mH

R6

0.33

1W

R8

16K

1%

C4

1nF

+

-

C7

10nF

Figure 3: Typical Application Circuit (100W)

8

3

BRIDGE

4 x BY255

R9

1.8M

1%

C1

1

µF

400V

R10

6.2K

1%

C2

22

µF

25V

FUSE 4A/250V

Vac

(175V to 265V)

R3

220K 5%

D3 1N4150

D2

1N5248B

R2

100 5%

4.7nF

C6

R1 68K 5%

T

5

6

L6560

7

21

C3 1

µF

R5 10

MOS

STP8NA50

R4 330

4

D1 BYT13-600

R7

1M

1%

C5

47

µF

450V

Vo=400V

Po=120W

+

-

D94IN049A

TRANSFORMER

T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT

primary 90T of Litz wire 10 x 0.2mm

secondary 7T of #27 AWG (0.15mm)

gap 1.25mm for a total primary inductance of 0.8mH

R6

0.4

1W

R8

6.34K

1%

C4

1nF

+

-

C7

10nF

Figure 4: Typical Application Circuit (120W)

L6560 - L6560A

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