L6590 datasheet(4/23 Pages) STMICROELECTRONICS

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L6590

4/23

ELECTRICAL CHARACTERISTCS (Tj = -25 to 125°C, Vcc = 10V; unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

POWER SECTION

V(BR)DSS Drain Source Voltage

Id < 200 µA; Tj = 25 °C

700

Idss

Off state drain current

Vds = 560V; Tj = 125 °C

200

µA

RDS(on)

Drain-to-Source on resistance

RDS(on) vs. Tj: see fig. 20

Id = 120mA; Tj =25 °C

Ω

Id = 120mA; Tj = 125 °C

ERROR AMP SECTION

VFB

Input Voltage

Tj = 25 °C

2.45

2.5

2.55

Tj = 125°C

2.4

2.5

2.6

E/A Input Bias Current

VFB = 0 to 2.5 V

0.3

µA

Avol

DC Gain

open loop

Unity Gain Bandwidth

0.7

MHz

SVR

Supply voltage Rejection

f = 120 Hz

Isink

Output Sink Current

VCOMP =1V

Isource

Output Source Current

VCOMP = 3.5V; VFB = 2V

-0.5

-1

-2.5

VCOMPH

Vout High

Isource = -0.5mA; VFB=2V

3.8

4.50

VCOMPL

Vout Low

Isink = 1mA ; VFB=3V

OSCILLATOR SECTION

Fosc

Oscillator Frequency

Tj =25°C

kHz

Dmin

Min. Duty Cycle

VCOMP =1V

Dmax

Max. Duty Cycle

VCOMP =4V

DEVICE OPERATION SECTION

Iop

Operating Supply Current

fsw = Fosc

4.5

Quiescent Current

MOS disabled

3.5

Icharge

VCC charge Current

Vcc =0V toVccon - 0.5V;

Vds = 100 to 400V; Tj =25°C

-3

-4.5

-7

Vcc =0V toVccon - 0.5V;

Vds = 100 to 400V

-2.5

-4.5

-7.5

VCCclamp VCC clamp Voltage

Iclamp = 10mA (*)

16.5

17.5

Vccon

Start Threshold

voltage

(*)

14.5

Vccoff

Min operating voltage after Turn

(*)

6.5

Vdsmin

Drain start voltage

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