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LM7805CK 数据表(PDF) 2 Page - National Semiconductor (TI) |
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LM7805CK 数据表(HTML) 2 Page - National Semiconductor (TI) |
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2 / 6 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Input Voltage (VO e 5V 12V and 15V) 35V Internal Power Dissipation (Note 1) Internally Limited Operating Temperature Range (TA)0 Cto a70 C Maximum Junction Temperature (K Package) 150 C (T Package) 150 C Storage Temperature Range b 65 Cto a150 C Lead Temperature (Soldering 10 sec) TO-3 Package K 300 C TO-220 Package T 230 C Electrical Characteristics LM78XXC (Note 2) 0 C s Tj s 125 C unless otherwise noted Output Voltage 5V 12V 15V Input Voltage (unless otherwise noted) 10V 19V 23V Units Symbol Parameter Conditions Min Typ Max Min Typ Max Min Typ Max VO Output Voltage Tj e 25 C 5mA s IO s 1A 48 5 52 115 12 125 144 15 156 V PD s 15W 5 mA s IO s 1A 475 525 114 126 1425 1575 V VMIN s VIN s VMAX (75 s VIN s 20) (145 s VIN s 27) (175 s VIN s 30) V D VO Line Regulation IO e 500 mA Tj e 25 C 3 50 4 120 4 150 mV D VIN (7 s VIN s 25) 145 s VIN s 30) (175 s VIN s 30) V 0 C s Tj s a125 C 50 120 150 mV D VIN (8 s VIN s 20) (15 s VIN s 27) (185 s VIN s 30) V IO s 1A Tj e 25 C 50 120 150 mV D VIN (75 s VIN s 20) (146 s VIN s 27) (177 s VIN s 30) V 0 C s Tj s a125 C25 60 75 mV D VIN (8 s VIN s 12) (16 s VIN s 22) (20 s VIN s 26) V D VO Load Regulation Tj e 25 C5 mA s IO s 15A 10 50 12 120 12 150 mV 250 mA s IO s 750 mA 25 60 75 mV 5mA s IO s 1A 0 C s Tj s a125 C 50 120 150 mV IQ Quiescent Current IO s 1A Tj e 25 C8 8 8 mA 0 C s Tj s a125 C 85 85 85 mA D IQ Quiescent Current 5 mA s IO s 1A 05 05 05 mA Change Tj e 25 C IO s 1A 10 10 10 mA VMIN s VIN s VMAX (75 s VIN s 20) (148 s VINs 27) (179 s VIN s 30) V IO s 500 mA 0 C s Tj s a125 C 10 10 10 mA VMIN s VIN s VMAX (7 s VIN s 25) (145 s VINs 30) (175 s VIN s 30) V VN Output Noise Voltage TA e25 C 10 Hz s f s 100 kHz 40 75 90 m V D VIN D VOUT Ripple Rejection IO s 1A Tj e 25 Cor 62 80 55 72 54 70 dB f e 120 Hz IO s 500 mA 62 55 54 dB 0 C s Tj s a125 C VMIN s VIN s VMAX (8 s VIN s 18) (15 s VIN s 25) (185 s VIN s 285) V RO Dropout Voltage Tj e 25 C IOUT e 1A 20 20 20 V Output Resistance f e 1 kHz 8 18 19 mX Short-Circuit Current Tj e 25 C 21 15 12 A Peak Output Current Tj e 25 C 24 24 24 A Average TC of VOUT 0 C s Tj s a125 C IO e 5 mA 06 15 18 mV C VIN Input Voltage Required to Maintain Tj e 25 C IO s 1A 75 146 177 V Line Regulation Note 1 Thermal resistance of the TO-3 package (K KC) is typically 4 CW junction to case and 35 CW case to ambient Thermal resistance of the TO-220 package (T) is typically 4 CW junction to case and 50 CW case to ambient Note 2 All characteristics are measured with capacitor across the input of 022 mF and a capacitor across the output of 01mF All characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw s 10 ms duty cycle s 5%) Output voltage changes due to changes in internal temperature must be taken into account separately 2 |
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