L6615 datasheet(4/20 Pages) STMICROELECTRONICS

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L6615

4/20

ELECTRICAL CHARACTERISTCS

(Tj = -40 to 85°C, Vcc=12V, VADJ = 12V, CCOMP = 5nF to GND, RCGA = 16kΩ, unless otherwise specified;

VSENSE = IL * RSENSE, RG1 = RG2 = 200Ω)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Vcc

Operating range

2.7

Icc

Quiescent current

VSH= 1V, VSENSE= 0V

VCC, ON

Turn-on voltage

VSH= 0.2V, VSENSE= 0V

2.45

2.60

2.75

VCC,OFF

Turn-off voltage

2.35

2.5

2.65

Hysteresis

100

ICC = 20mA

CURRENT SENSE AMPLIFIER

VOS

Input offset voltage

0.1V

≤ VSH ≤ 10.0V

-1.5

0.0

1.5

VCGA

Out high voltage

VSENSE = 0.25V

Vcc-2.2

ICGAS

Short circuit current

VCGA= 0V, VSENSE= 0.45V

-1.5

-2.0

IB(CS-)

Input bias current (high side

sensing)

VSENSE = 0V, VCS+=+12V

1.0

µA

IB(CS+)

Input bias current (low side

sensing)

VSENSE = 0V, VCS+=0V

-1.0

µA

CMR

Common mode dynamics range

VCS-, VCS+

0VCC

VTHCS+

Switchover threshold low side to

high side sensing

VCS+

1.6

SWH

Switchover hysteresis

0.16

SHARE DRIVE AMPLIFIER

HVSH

SH high output voltage

VSENSE= 250mV, ISH= -1mA

Vcc-2.2

LVSH

SH low output voltage

VCGA= 0mV, RSH= 200

Ω

α(+)

High side sensing mirror accuracy

(*)

±1

±5

α(-)

Low side sensing mirror accuracy

(*)

±1

±5

VSH, load Load regulation

-1.0mA

≤ ISDA(OUT) ≤ -4mA

ISC

Short circuit current

VSH= 0V, VSENSE= 25mV

-20

-13.5

-8

Slew rate

VSENSE= -10mV to 90mV step,

RSH= 200Ω to GND

0.8

1.5

2.2

µs

VSENSE= 90mV to –10mV step,

RSH= 200Ω to GND

234

µs

SHARE SENSE AMPLIFIER

Input impedance

22.4

41.6

Ω

ERROR AMPLIFIER

Transconductance

Vos

Input offset voltage

VCGA=1V

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