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2026 Microchip Technology Inc. and its subsidiaries

DS20007034A-page 3

PL133-47

SWITCHING CHARACTERISTICS Note 2

Parameter

Symbol

Min.

Typ.

Max.

Units Conditions

Operating Frequency

f

DC

—

160

MHz VDD = 3.3V, 2.5V

DC

—

67

MHz VDD = 1.8V

Duty Cycle = t2 ÷ t1

—

40

50

60

%

Measured at 1.4V, Input is 50%

Rise Time

t3

—

—

1.5

ns

Measured between 0.8V and 2.0V

Fall Time

t4

—

—

1.5

ns

Measured between 0.8V and 2.0V

Output to Output Skew

Note 1

t5

—

—

250

ps

All outputs equally loaded

Propagation Delay, REF

Rising Edge to CLKX

Rising Edge Note 1

t6

1

5

9.2

ns

Measured at VDD/2

Note 1: Parameter is ensured by design and characterization.

2: All parameters are specified with loaded outputs.

NOISE CHARACTERISTICS

Parameter

Symbol

Min.

Typ.

Max.

Units Conditions

Additive Phase Jitter

—

—

60

—

fs

VDD = 3.3V, Frequency = 100 MHz

Integration range 12 kHz to 20 MHz

TEMPERATURE SPECIFICATIONS (Note 1)

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Ambient Operating Temperature

TA

–40

—

+85

°C

Ordering Option I

0

—

+70

°C

Ordering Option C

Junction Temperature

TJ

—

—

+150

°C

—

Storage Temperature Range

TS

–65

—

+150

°C

—

Package Thermal Resistance

8-Lead SOIC

RθJA

—

—

103.2

°C/W —

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the

maximum allowable power dissipation will cause the device operating junction temperature to exceed the

maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.