Electrical characteristics

TS881

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DocID023340 Rev 2

2

Electrical characteristics

Table 3. VCC =+0.9V, Tamb = +25 °C, VICM = 0 V (unless otherwise specified)(1)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VIO

Input offset voltage (2)

-40 °C < Tamb < +85 °C

-10

-12

110

12

mV

VIO

Input offset voltage drift

-40 °C < Tamb < +85 °C

4.6

V/°C

VHYST Input hysteresis voltage(3)

-40 °C < Tamb < +85 °C

1.0

2.4

4.2

mV

IIO

Input offset current(4)

-40 °C < Tamb < +85 °C

-10

-100

10

100

pA

IIB

Input bias current(4)

-40 °C < Tamb < +85 °C

-10

-100

10

100

pA

ICC

Supply current per operator

No load, output low, VID =-0.1 V

-40 °C < Tamb < +85 °C

No load, output high, VID =+0.1 V

-40 °C < Tamb < +85 °C

300

260

400

450

350

400

nA

ISC

Short-circuit current

Source

Sink

0.2

0.4

mA

VOH

Output voltage high

Isource =50 A

-40 °C < Tamb < +85 °C

0.85

0.83

0.87

V

VOL

Output voltage low

Isink =50 A

-40 °C < Tamb < +85 °C

20

50

70

mV

TPLH

Propagation delay

(low to high)

f= 1kHz, CL =30pF, RL =1M

Overdrive = 10 mV

-40 °C < Tamb < +85 °C

Overdrive = 100 mV

-40 °C < Tamb < +85 °C

7.2

3.3

14

16

5.0

5.5

s

TPHL

Propagation delay

(high to low)

f= 1kHz, CL =30pF, RL =1M

Overdrive = 10 mV

-40 °C < Tamb < +85 °C

Overdrive = 100 mV

-40 °C < Tamb < +85 °C

6.0

2.5

11

12

4.5

5.0

s

TR

Rise time (10% to 90%)

CL =30pF, RL =1 M

160

ns

TF

Fall time (90% to 10%)

CL =30pF, RL =1 M

140

ns

TON

Power-up time

1.1

1.7

ms

1. All values over the temperature range are guaranteed through correlation and simulation. No production test is performed

at the temperature range limits.

2. The offset is defined as the average value of positive and negative trip points (input voltage differences requested to

change the output state in each direction).

3. The hysteresis is a built-in feature of the TS881 device. It is defined as the voltage difference between the trip points.

4. Maximum values are guaranteed by design.