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STPS15L25 数据表(PDF) 3 Page - STMicroelectronics |
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STPS15L25 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() STPS15L25D/G 3/5 1E-3 1E-2 1E-1 1E+0 0 50 100 150 200 250 300 350 IM(A) Tc=25°C Tc=100°C Tc=75°C t(s) IM t δ=0.5 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). 0 5 10 15 20 25 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 IR(mA) Tj=125°C Tj=25°C Tj=150°C VR(V) Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). 1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0 0.0 0.2 0.4 0.6 0.8 1.0 t(s) Zth(j-c)/Rth(j-c) T δ=tp/T tp Single pulse δ = 0.1 δ = 0.2 δ = 0.5 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. 12 5 10 20 30 0.1 1.0 5.0 VR(V) C(nF) F=1MHz Tj=25°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). IFM(A) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.0 10.0 100.0 200.0 VFM(V) Tj=25°C Tj=125°C Typical values Tj=150°C Fig. 9: Forward voltage drop versus forward current (maximum values). 0 4 8 1216 202428323640 0 10 20 30 40 50 60 70 80 Rth(j-a) (°C/W) S(Cu) (cm²) Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS15L25G only) |
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