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L9380 数据表(PDF) 4 Page - STMicroelectronics |
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L9380 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() FUNCTIONAL DESCRIPTION The Triple High-Side Power-MOS Driver features all necessary control and protection functions to switch on three Power-MOS transistors operating as High-Side switches in automotive electronic control units. The key application field is relays re- placement in systems where high current loads, usually motors with nominal currents of about 40A connected to ground, has to be switched. A high signal at the EN pin enables all three channels. With enable low gates are clamped to ground. In this condition the gate sink current is higher than the specified 3mA. An enable low sig- nal makes also a reset of the timer. A low signal at the inputs switch on the gates of the external MOS. A short circuit at the input leads to permanent activation of the concerned channel. In this case the device can be disabled with the enable pin. The charge pump loading is not influenced due to the enable input. An external N-channel MOS driver in high side configuration needs a gate driving voltage higher than VS. It is generated by means of a charge pump with integrated charge transfer capacitors and one external charge storage capacitor CCP. The charge pump is dimensioned to load a ca- ELECTRICAL CHARACTERISTICS (7V ≤ VS ≤ 18.5V; -40°C ≤ TJ ≤ 150°C, unless otherwise specified.) Symbol Parameter Test Condition Min. Typ. Max. Unit SUPPLY IVS Static Operating Supply Current VS = 14V 2.5 mA CHARGE PUMP VCP Charge Pump Voltage Above VS 817 V tCP Charging Time VCP = VS + 8V CCP = 100pF 200 µs VSCP off Overvoltage Shut down 20 30 V VSCP hys Overvoltage Shut down Hysteresis 1) 50 200 1000 mV fCP Charge Pump frequency 1) 100 250 400 KHz GATE DRIVERS IGSo Gate Source Current VG = VS -5 -3 -1 mA IGSi Gate Sink Current VG ≥ 0.8V 1 3 5 mA DRAIN - SOURCE SENSING VPR Bias Current Programming voltage 10 µA ≤ IPR ≤ 100µA; VD ≥ 4V 1.8 2 2.2 V ID Leak Drain pin leakage current VS = 0V; VD =14V 0 5 µA ID Drain pin bias current VS ≥ VD + 1V; VD ≥ 5V 0.9 IPR 1.1 IPR ISmax Source pin input current VS ≥ VD + 1V; VD ≥ 7V 10 60 µA VHYST Comparator Hysteresis 20 mV TIMER VTHi Timer threshold high 4 4.4 4.8 V VTLo Timer threshold low 0.3 0.4 0.5 V IT Timer Current IN = 5V; VT = 2V IN = 0V; VS < VD; VD ≥ 5V; VT = 2V 0.4 IPR -0.6 IPR 0.6 IPR -0.4 IPR INPUTS VLOW Input Enable low voltage -0.3 1 V VHIGH Input Enable high voltage 3 7 V VINhys Input Enable Hysteresis (1) 50 200 500 mV IIN Input source current VIN ≤ 3V -30 -5 µA IEN Enable sink current VEN ≥ 1V 5 30 µA td Transfer time IN/ENABLE VS = 14V VG = VS; OPEN GATE 2.5 µs NOTE: Not measured guaranteed by design Function is given for supply voltage down to 5.5V. Function means: The channels are controlled from the inputs, some other parameters may exceed the limit. In this case the programming voltage and timer threshold will be lower. This leads to a lower protection threshold and time. L9380 4/12 |
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