HSC04065F datasheet(1/4 Pages) HUIXIN

部件名	HSC04065F

功能描述	Silicon Carbide Schottky Diode

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制造商	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

网页	http://www.hxkj.hk

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+86-769-22857832

huixin@hx kj.hk

Rev.01

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HSC04065F

Silicon Carbide Schottky Diode

Features:

• Zero Reverse Recovery Current

• Zero Forward Recovery Voltage

• New Thin Wafer Technology

• Positive Temperature Coefficient on VF

• Temperature-independent Switching

• Excellent surge current capability

• 175°C Operating Junction Temperature

Applications:

• Switch Mode Power Supplies

• Power Factor Correction

• Motor drive, PV Inverter, Wind Power Station

Benefits:

• Replace Bipolar with Unipolar Device

• Reduction of Heat Sink Size

• Parallel Devices Without Thermal Runaway

• Essentially No Switching Losses

Ordering Information

Part Number

Package

Marking

Packing

Qty.

HSC04065F

TO-220F

HSC04065F

Tube

50 PCS

Maximum Ratings（TJ= 25℃ unless otherwise specified）

Symbol Parameter

Value

Unit

Test Conditions

Note

VRRM

Repetitive Peak Reverse Voltage

650

V

TC = 25℃

VRSM

Surge Peak Reverse Voltage

650

V

TC = 25℃

VR

DC Blocking Voltage

650

V

TC = 25℃

IF

Forward Current

6

4

A

TC ≤ 110℃

TC ≤ 130℃

IFSM

Non-Repetitive Forward Surge

Current

32

A

TC = 25℃, tp = 8.3ms, Half Sine

Wave

Ptot

Power Dissipation

28

W

TC = 25℃

TO-220 Mounting Torque

1

Nm

M3 Screw

TJ,TST

G

Operating Junction and Storage

Temperature

-55

-175

℃

VRRM

IF ( TC≤130℃)

QC

650V

4A

11.5nc

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