L9904 datasheet(6/17 Pages) STMICROELECTRONICS

6 / 17 page

L9904

6/17

tKr

Rise time

VVS = 13.5V; Fig. 1

External loads at K-line:

RK = 510Ω pull up

to VVS

CK = 2.2nF to GND

µs

tKf

Fall time

µs

tKH

Switch high delay time

µs

tKL

Switch low delay time

µs

tSH

Short circuit detection time

VVS = 13.5V;

TX = LOW

VK > 0.55 · VVS

µs

Charge pump

VCP

Charge pump voltage

VVS = 8V

VVS = 13.5V

VVS = 20V

VVS+

10V

VVS+

10V

VVS+

14V

VVS+

14V

VVS

+14V

ICP

Charging current

VCP= VVS + 8V

VVS = 13.5V

-50

-75

µA

tCP

Charging time 2)

VCP= VVS + 8V

VVS = 13.5V

CCP = 10nF

1.2

fCP

Charge pump frequency

VVS = 13.5V

250

500

750

kHz

Drivers for external highside power MOS

VCB1

VCB2

Bootstrap voltage

VVS = 8V; ICBX = 0; VSX = 0

VVS =13.5V; ICBX = 0; VSX = 0

VVS = 20V; ICBX = 0; VSX = 0

7.5

RGH1L

RGH2L

ON-resistance of SINK stage

VCBX = 8V; VSX = 0

IGHX = 50mA; TJ = 25°C

Ω

VCBX = 8V; VSX = 0

IGHX = 50mA; TJ = 125°C

Ω

RGH1H

RGH2H

ON-resistance of SOURCE stage

IGHX = -50mA; TJ = 25°C

IGHX = -50mA; TJ = 125°C

Ω

VGH1H

VGH2H

Gate ON voltage (SOURCE)

VVS= VSX = 8V; IGHX = 0;

CCBX = 0.1µF

VVS

+6.5V

VVS

+14V

VVS = VSX = 13.5V; IGHX = 0;

CCBX = 0.1µF

VVS+

10V

VVS

+14V

VVS = VSX = 20V; IGHX = 0;

CCBX = 0.1µF

VVS

+10V

VVS

+14V

RGH1

RGH2

Gate discharge resistance

EN = LOW

100

Ω

RS1

RS2

Sink resistance

100

Ω

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

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