STM32L4P5CEU6P datasheet(234/311 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L4P5xx

234/311

DS12903 Rev 2

6.3.23

Temperature sensor characteristics

6.3.24

VBAT monitoring characteristics

Table 88. TS characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

1. Guaranteed by design.

VTS linearity with temperature

±1

±2

°C

Avg_Slope(2)

2. Guaranteed by characterization results.

Average slope

2.3

2.5

2.7

mV/°C

V30

Voltage at 30°C (±5 °C)(3)

3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to

Table 8: Temperature sensor calibration values.

0.742

0.76

0.785

tSTART

(TS_BUF)(1)

Sensor Buffer Start-up time in continuous

mode(4)

Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power

sleep modes.

µs

tSTART(1)

Start-up time when entering in continuous

mode(4)

120

µs

tS_temp(1)

ADC sampling time when reading the

temperature

µs

IDD(TS)(1)

Temperature sensor consumption from VDD,

when selected by ADC

-4.7

µA

Table 89. VBAT monitoring characteristics(1)

1. 1.55 V < VBAT <3.6 V

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-39

kΩ

QRatio on VBAT measurement

Er(2)

2. Guaranteed by design.

Error on Q

-10

tS_vbat(2)

ADC sampling time when reading the VBAT

µs

Table 90. VBAT charging characteristics

Symbol

Parameter Conditions

Min

Typ

Max

Unit

RBC

Battery

charging

resistor

VBRS = 0

kΩ

VBRS = 1

1.5

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