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LCDP1521 数据表(PDF) 3 Page - STMicroelectronics |
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LCDP1521 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() LCDP1521 3/8 Symbol Parameter Value Unit IPP Peak pulse current (see note1) 10/1000 µs 8/20µs 10/560µs 5/310 µs 10/160µs 1/20µs 2/10 µs 15 60 20 25 30 60 70 A ITSM Non repetitive surge peak on-state current (50Hz sinusoidal) t = 10ms t=1s 5 3.5 A I 2t I 2t value for fusing (50Hz sinusoidal) t = 10ms 0.125 A 2s IGSM Maximum gate current (50Hz sinusoidal) t = 10ms 2 A VMLG VMGL Maximum voltage LINE/GND Maximum voltage GATE/LINE -40°C < Tamb < +85°C -40°C < Tamb < +85°C -150 -150 V Tstg Tj Storage temperature range Maximum junction temperature -55to+150 150 °C TL Maximum lead temperature for soldering during 10s 260 °C ABSOLUTE RATINGS (Tamb = 25°C, unless otherwise specified). 100 50 %IPP t t t r p 0 tr: rise time (µs) tp: pulse duration (µs) ex: Pulse waveform 10/1000µs tr = 10µs tp = 1000µs Repetitive peak pulse current Symbol Test conditions Max Unit VF I F =1A t = 500µs 2 V VFP (note 1) 10/700 µs 1.2/50 µs 2/10 µs 1.5kV 1.5kV 2.5kV R S = 110Ω R S =60Ω R S = 245Ω I PP = 10A I PP = 15A I PP = 10A 5 10 20 V Note 1: see test circuit for VFP;RS is the protection resistor located on the line card. PARAMETERS RELATED TO THE DIODE LINE / GND (Tamb = 25°C) |
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