MP9989

– FAST TURN-OFF INTELLIGENT RECTIFIER

MP9989 Rev. 1.1

www.MonolithicPower.com

5

8/27/2020

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© 2020 MPS. All Rights Reserved.

ELECTRICAL CHARACTERISTICS

VDD = 6.7V, TJ = -40 to about +125°C, unless otherwise noted.

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Drain-source breakdown

voltage

V(BR)DSS

TJ = 25°C

100

V

VDD UVLO rising

4.0

4.2

4.4

V

VDD UVLO hysteresis

0.1

0.24

0.38

V

VDD maximum charging

current

IVDD

VDD = 5.5V, SENSE = 30V

63

mA

Operating current

ICC

fSW = 100kHz

4

6

mA

Quiescent current

IQ(VDD)

VDD = 7V

110

135

µA

Control Circuitry Section

Forward regulation voltage

(VS-VD) (7)

VFWD

25

40

55

mV

Turn-on threshold (VDS)

-115

-80

-57

mV

Turn-off threshold (VS-VD) (7)

-6

3

12

mV

Turn-on delay (8)

tD-ON

20

ns

Turn-off delay (7)

tD-OFF

25

ns

Turn-on blanking time

tB-ON

CLOAD = 2.2nF

0.8

1.2

1.55

µs

Turn-off blanking threshold

(VDS)

VB-OFF

2

3

V

Turn-off threshold during

minimum on time (VDS)

1.8

V

Turn-on slew rate detection

time (8)

30

ns

Power Switch Section

Single pulse avalanche

energy (9)

EAS

VDD = 50V, VGS = 10V,

L = 1.0mH, TJ = 25°C

20

mJ

Drain-source on state

resistance

RDS(ON)

ID = 2A,TJ = 25°C

10

12.5

mΩ

Input capacitance

CISS

VDS = 40V, VGS = 0V,

f = 1MHz

3850

pF

Output capacitance

COSS

614

pF

Reverse transfer capacitance

CRSS

40

pF

Source-Drain Diode Characteristics

Source-drain diode forward

voltage

VSD

IS = 8A, VGS = 0V

0.8

1.2

V

Reverse recovery time

tRR

IF

= 10A, dl/dt = 100A/μs

78.8

ns

Diode reverse change

QRR

105.6

nC

Notes:

7) Guaranteed by characterization.

8) Guaranteed by design.

9) EAS is tested at starting TJ = 25°C, L = 1mH, IAS = 6.4A, VDD = 50V, VGS = 10V