BU508AT datasheet(1/3 Pages) CDIL

部件名	BU508AT

功能描述	NPN SILICON PLANAR POWER TRANSISTOR

PDF	3 Pages

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制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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NPN SILICON PLANAR POWER TRANSISTOR

BU508AT

TO-220

Plastic Package

High Voltage, High-Speed Switching Transistor

Intended for use in Horizontal Deflection Circuits of Colour Televisions

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

Collector Emitter Voltage

VCES

Collector Emitter Voltage

VCEO

Collector Current (DC)

IC

Collector Current (Peak)

ICM

Base Current (DC)

IB

Base Current (Peak)

IBM

Reverse Base Current (DC or average

over any 20 ms period)

-IB(AV)

Reverse Base Current (Peak Value)

*-IBM

Power Dissipation upto Tc=25ºC

Ptot

Operating and Storage Junction

Temperature Range

Tj, Tstg

*Turn off Current

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

**ICES

VCE=VCES max, VBE=0

1.0

mA

Tj=125ºC

VCE=VCES max, VBE=0

2.0

mA

Emitter Cut off Current

IEBO

VEB=6V, IC=0

10

mA

Collector Emitter Sustaining Voltage

*VCEO(sus)

IC=100mA, IB=0, L=25mH

700

V

DC Current Gain

*hFE

IC=4.5A, VCE=5V

2.25

Collector Emitter Saturation Voltage

*VCE(sat)

IC=4.5A, IB=2A

1.0

V

Base Emitter Saturation Voltage

*VBE(sat)

IC=4.5A, IB=2A

1.3

V

Transition Frequency

fT

IC=0.1A, VCE=5V, f=5MHz

7

MHz

Collector Capacitance

CC

IE=ie=0, VCB=10V, f=1MHz

125

pF

**Measured with half-sinewave Voltage (curve tracer)

*Pulse Test: Pulse Width=5ms, Duty Cycle<10%

A

W

ºC

A

mA

UNIT

V

A

100

5

60

- 65 to +150

VALUE

1500

700

8

15

4

6

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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