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TP70H480G4JSG 数据表(PDF) 4 Page - Renesas Technology Corp

部件名 TP70H480G4JSG
功能描述  700V SuperGaN® GaN FET in PQFN 5x6 Performance Package (source tab)
PDF  13 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

TP70H480G4JSG 数据表(HTML) 4 Page - Renesas Technology Corp

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TP70H480G4JSG Datasheet
R07DS1594EU0102 Rev.1.02
Nov 21, 2025
Page 4
2. Specifications
2.1
Absolute Maximum Ratings
(Tc = 25°C unless otherwise stated.)
Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such
conditions can adversely impact product reliability and result in failures not covered by warranty.
Symbol
Parameter
Minimum
Maximum
Unit
VDSS
Drain to source voltage (TJ = -55°C to 150°C)
-
700
V
VDSS(TR) , non-repetitive
Transient drain to source voltage, non-repetitive [1]
-
800
VDSS(TR) , repetitive
Transient drain to source voltage, repetitive [2]
-
750
VGSS
Gate to source voltage
-20
+20
PD
Maximum power dissipation at TC = 25°C
-
25
W
ID
Continuous drain current at TC = 25°C
-
5
A
Continuous drain current at TC = 100°C
-
3.1
A
IDM
Pulsed drain current (pulse width: 10µs)
-
16
A
TJ
Junction operating temperature
-55
+150
°C
TS
Storage temperature
-55
+150
°C
TSOLD
Reflow soldering temperature [3]
-
260
°C
1.
In off-state, spike duration < 30µs, non-repetitive.
2.
Off-state, spike duration < 5µs.
3.
Reflow MSL3.
2.2
Thermal Specifications
Symbol
Condition
Typical Value
Unit
RΘJC
Junction-to-case
5
°C/W
RΘJA
Junction-to-ambient [1]
50
1.
Device on one layer epoxy PCB for source connection (vertical and without air stream cooling, with 6cm2 copper area and 70µm
thickness).



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