Copyright@ Semipower Technology Co., Ltd. All rights reserved.

May.2022. Rev. 0.6

1/6

SW040R03VLT

Features

⚫ High ruggedness

⚫ Low R

DS(ON) (Typ 5.1mΩ)@VGS=4.5V

(Typ 3.7m

Ω)@V

GS=10V

⚫ Low Gate Charge (Typ 59nC)

⚫ Improved dv/dt Capability

⚫ 100% Avalanche Tested

⚫ Application:Synchronous Rectification,

Li Battery Protect Board, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics,

including fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

30

V

I

D

Continuous drain current (@T

C=25

oC)

100*

A

Continuous drain current (@T

C=100

oC)

83*

A

I

DM

Drain current pulsed

(note 1)

400

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

156

mJ

E

AR

Repetitive avalanche energy

(note 1)

15

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

100

W

Derating factor above 25oC

0.8

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

1.25

oC/W

R

thja

Thermal resistance, Junction to ambient

74

oC/W

*. Drain current is limited by junction temperature.

1. Gate 2.Drain 3.Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 040R03VLT

SW040R03VLT

TO-252

REEL

N-channel Enhanced mode TO-252 MOSFET

BV

DSS : 30V

I

D

: 100A

R

DS(ON) : 5.1mΩ@VGS=4.5V

3.7m

Ω@V

GS=10V

1

2

3

TO-252

1

2

3