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2STL1360 数据表(PDF) 3 Page - STMicroelectronics

部件名 2STL1360
功能描述  Low voltage fast-switching NPN power bipolar transistors
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2STL1360 数据表(HTML) 3 Page - STMicroelectronics

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2STX1360 2STL1360
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
2.1
Electrical characteristics (curves)
Table 4.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = 80V
100
nA
IEBO
Emitter cut-off current
(IC =0)
VEB = 6V
100
nA
VBE
Base-emitter voltage
VCE = 2V
IC = 100mA
630
670
730
mV
VCE(sat) (1) Collector-emitter
saturation voltage
IC = 2A
IB = 100mA
IC = 3A
IB = 150mA
150
210
300
500
mV
mV
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 2A
IB = 100mA
0.89
1.2
V
hFE (1)
DC current gain
IC = 0.1A
VCE = 2V
IC = 1A
VCE = 2V
80
160
280
400
td
tr
ts
tf
RESISTIVE LOAD
Delay time
Rise time
Storage time
Fall time
VCC = 10V
IC = 3A
IB1 = -IB2 = 300mA
(see figure 9)
17
81
620
54
20
100
720
65
ns
ns
ns
ns
fT
Transition frequency
IC = 0.1A
VCE = 10V
130
MHz
Figure 2.
DC current gain
Figure 3.
DC current gain



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