Potens semiconductor corp.

Ver.1.03

2

PDC6905X

60V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-60

---

---

V

IDSS

Drain-Source Leakage Current

VDS=-60V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-48V , VGS=0V , TJ=125℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-8A

---

41

47

m



VGS=-4.5V , ID=-6A

---

53

64

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

-1.6

-2.5

V

gfs

Forward Transconductance

VDS=-10V , IS=-3A

---

11

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=-30V , VGS=-10V , ID=-10A

---

19

30

nC

Qgs

Gate-Source Charge3 , 4

---

2.5

3.8

Qgd

Gate-Drain Charge3 , 4

---

4.3

6.5

Td(on)

Turn-On Delay Time3 , 4

VDD=-30V , VGS=-10V , RG=25



ID=-10A

---

25

40

ns

Tr

Rise Time3 , 4

---

58

95

Td(off)

Turn-Off Delay Time3 , 4

---

65

110

Tf

Fall Time3 , 4

---

35

55

Ciss

Input Capacitance

VDS=-30V , VGS=0V , F=1MHz

---

1200

1800

pF

Coss

Output Capacitance

---

85

130

Crss

Reverse Transfer Capacitance

---

60

90

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

14

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-25

A

ISM

Pulsed Source Current

---

---

-50

A

VSD

Diode Forward Voltage

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

trr

Reverse Recovery Time

VR=-50V, IS=-10A

di/dt=100A/µs, TJ=25℃

---

30

---

ns

Qrr

Reverse Recovery Charge

---

20

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=-25V,VGS=-10V,L=0.1mH,IAS=-34A.,Starting TJ=25℃

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings