Potens semiconductor corp.

Ver.1.01

2

PDD0906

100V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

100

---

---

V

△

BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃

, ID=1mA

---

0.05

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=100V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±

100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=5A

---

72

90

m



VGS=4.5V , ID=3A

---

75

100

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

-5

---

mV/℃

gfs

Forward Transconductance

VDS=10V , ID=3A

---

8.7

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge

2 , 3

VDS=48V , VGS=10V , ID=5A

---

9.3

13

nC

Qgs

Gate-Source Charge

2 , 3

---

2.1

4.2

Qgd

Gate-Drain Charge

2 , 3

---

1.8

4

Td(on)

Turn-On Delay Time

2 , 3

VDD=30V , VGS=10V , RG=3.3

ID=1A

---

2.9

6

ns

Tr

Rise Time

2 , 3

---

9.5

18

Td(off)

Turn-Off Delay Time

2 , 3

---

18.4

35

Tf

Fall Time

2 , 3

---

5.3

10

Ciss

Input Capacitance

VDS=50V , VGS=0V , F=1MHz

---

1480

2150

pF

Coss

Output Capacitance

---

480

700

Crss

Reverse Transfer Capacitance

---

35

55

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.3

2.6



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

15

A

ISM

Pulsed Source Current

---

---

60

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time

2

VGS=30V,IS=1A , dI/dt=100A/µs

TJ=25℃

---

---

---

ns

Qrr

Reverse Recovery Charge

2

---

---

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings