LET9002 datasheet(1/4 Pages) STMICROELECTRONICS

部件名	LET9002

功能描述	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

PDF	4 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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TARGET DATA

April, 15 2003

LET9002

RF POWER TRANSISTORS

Ldmos Enhanced Technology in Plastic Package

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V

• NEW LEADLESS PLASTIC PACKAGE

• ESD PROTECTION

• SUPPLIED IN TAPE & REEL OF 3K UNITS

DESCRIPTION

The LET9002 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1000

MHz. The LET9002 is designed for high gain and

broadband performance operating in common

source mode at 26 V. LET9002

boasts

the

excellent gain, linearity and reliability of ST’s latest

LDMOS technology mounted in the innovative

leadless SMD plastic package, PowerFLAT™.

It is ideal

for digital cellular BTS applications

requiring high linearity.

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

0.25

A

PDISS

Power Dissipation (@ Tc = 70°C)

4

W

Tj

Max. Operating Junction Temperature

150

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

20

°C/W

ORDER CODE

LET9002

BRANDING

9002

PowerFLAT

™(5x5)

PIN CONNECTION

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类似零件编号 - LET9002

制造商	部件名	数据表	功能描述
STMicroelectronics	LET9006	40Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 15-Apr-2003

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类似说明 - LET9002

制造商	部件名	数据表	功能描述
STMicroelectronics	LET19060C	34Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology 24-Jan-2003
	LET20015	67Kb / 5P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 27-Feb-2003
	LET20030C	37Kb / 5P	RF POWER TRANSISTORS Ldmos Enhanced Technology 24-Jan-2003
	LET20030S	43Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 27-Feb-2003
	LET21004	40Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 15-Apr-2003
	LET21008	40Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 15-Apr-2003
	LET21030C	62Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology 24-Jan-2003
	LET9006	40Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 15-Apr-2003
	LET9045S	292Kb / 9P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 27-Feb-2003
	LET9060S	296Kb / 10P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 25-Mar-2003

More results

LET9002 数据表(PDF) 1 Page - STMicroelectronics

LET9002 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - LET9002

类似说明 - LET9002

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LET9002 数据表(PDF) 1 Page - STMicroelectronics

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类似零件编号 - LET9002

类似说明 - LET9002

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