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LET9085 数据表(PDF) 1 Page - STMicroelectronics |
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LET9085 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() 1/4 TARGET DATA January, 28 2003 LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 % • EDGE PERFORMANCES POUT = 35 W EFF. = 35 % • GSM PERFORMANCES POUT = 75 W EFF. = 55 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION DESCRIPTION The LET9085 is a common source N-Channel en- hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. PIN CONNECTION 1. Drain 2. Source 3. Gate 1 2 3 M265 epoxy sealed ORDER CODE LET9085 BRANDING LET9085 ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V ID Drain Current 12 A PDISS Power Dissipation (@ Tc = 70 °C) 186 W Tj Max. Operating Junction Temperature 200 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.7 °C/W |
类似零件编号 - LET9085 |
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类似说明 - LET9085 |
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