LET9130 datasheet(1/6 Pages) STMICROELECTRONICS

部件名	LET9130

功能描述	RF POWER TRANSISTORS Ldmos Enhanced Technology

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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PRELIMINARY DATA

February, 6 2003

LET9130

RF POWER TRANSISTORS

Ldmos Enhanced Technology

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• IS-95 CDMA: 865-895 MHz / 28 V

POUT = 25 W

EFF. = 29 %

• EDGE: 920-960 MHz / 28 V

POUT = 45 W

EFF. = 38 %

• GSM: 920-960 MHz / 28 V

POUT = 135 W

EFF. = 51 %

• EXCELLENT THERMAL STABILITY

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

• ESD PROTECTION

DESCRIPTION

The LET9130 is a common

source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1.0

GHz. The LET9130 is designed for high gain and

broadband performance operating in common

source mode at 28 V. Its internal matching makes

it ideal for base station applications requiring high

linearity.

PIN CONNECTION

1. Drain

2. Source

3. Gate

1

2

3

M265

epoxy sealed

ORDER CODE

LET9130

BRANDING

LET9130

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

15

A

PDISS

Power Dissipation (@ Tc = 70 °C)

217

W

Tj

Max. Operating Junction Temperature

200

°C

TSTG

Storage Temperature

-65 to +200

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

0.6

°C/W

类似零件编号 - LET9130

制造商	部件名	数据表	功能描述
STMicroelectronics	LET9120	208Kb / 11P	RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs 22-Oct-2010
	LET9150	325Kb / 12P	RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs 22-Dec-2010
	LET9180	314Kb / 10P	Excellent thermal stability 29-May-2013

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类似说明 - LET9130

制造商	部件名	数据表	功能描述
STMicroelectronics	LET19060C	34Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology 24-Jan-2003
	LET20030C	37Kb / 5P	RF POWER TRANSISTORS Ldmos Enhanced Technology 24-Jan-2003
	LET20030S	43Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 27-Feb-2003
	LET21008	40Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 15-Apr-2003
	LET21030C	62Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology 24-Jan-2003
	LET8180	33Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology 28-Jan-2003
	LET9006	40Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 15-Apr-2003
	LET9045S	292Kb / 9P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 27-Feb-2003
	LET9060C	36Kb / 5P	RF POWER TRANSISTORS Ldmos Enhanced Technology 04-Nov-2002
	LET9085	35Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology 28-Jan-2003

More results

LET9130 数据表(PDF) 1 Page - STMicroelectronics

LET9130 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - LET9130

类似说明 - LET9130

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类似零件编号 - LET9130

类似说明 - LET9130

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