Potens semiconductor corp.

Ver.1.00

2

PDF0959

100V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250µA

-100

---

---

V

IDSS

Drain-Source Leakage Current

VDS=-100V , VGS=0V , TJ=25℃

---

---

-1

µA

VDS=-80V , VGS=0V , TJ=85℃

---

---

-10

µA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-15A

---

32

38

m



VGS=-4.5V , ID=-10A

---

36

47

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250µA

-1.2

-1.6

-2.5

V

Dynamic and switching Characteristics

Qg

Total Gate Charge3,4

VDS=-50V , VGS=-10V , ID=-10A

---

92

140

nC

Qgs

Gate-Source Charge3,4

---

13

20

Qgd

Gate-Drain Charge3,4

---

14

20

Td(on)

Turn-On Delay Time3,4

VDD=-50V , VGS=-10V , RG=6



ID=-10A

---

10

15

ns

Tr

Rise Time3,4

---

15

25

Td(off)

Turn-Off Delay Time3,4

---

20

30

Tf

Fall Time3,4

---

25

40

Ciss

Input Capacitance

VDS=-50V , VGS=0V , F=1MHz

---

5700

8550

pF

Coss

Output Capacitance

---

160

240

Crss

Reverse Transfer Capacitance

---

120

180

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

EAS

Single Pulse Avalanche Energy

VDD=50V, L=0.1mH, IAS=46A

105.8

---

---

mJ

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-25

A

ISM

Pulsed Source Current

---

---

-50

A

VSD

Diode Forward Voltage

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

trr

Reverse Recovery Time3

VR=-50V IS=-10A

dI/dt=100A/µs

TJ=25℃

---

55

---

ns

Qrr

Reverse Recovery Charge3

---

60

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=-50V,VGS=-10V,L=0.1mH,IAS=-60A.,Starting TJ=25℃

3.

The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Guaranteed Avalanche Energy