T2035H datasheet(5/10 Pages) STMICROELECTRONICS

5 / 10 page

T2035H, T2050H

Characteristics

5/10

Figure 9.

Relative variation of critical rate of

decrease of main current (dI/dt)c

versus reapplied (dV/dt)c

(typical values)

Figure 10.

Relative variation of critical rate of

decrease of main current versus

junction temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

100.0

(dI/dt)

c [(dV/dt) c ] / Specified (dI/dt)c

(dV/dt)C (V/µs)

100

125

150

(dI/dt)

c [Tj] / (dI/dt)c [Tj=150°C]

Tj(°C)

Figure 11.

Leakage current versus junction

temperature for different values of

blocking voltage (typical values)

Figure 12.

Acceptable repetitive peak off-state

voltage versus case to ambient

thermal resistance

Figure 13.

Thermal resistance junction to

ambient versus copper surface

under tab

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

100

125

150

DRM/IRRM(µA)

DRM=VRRM=400 V

DRM=VRRM=600 V

DRM=VRRM=200 V

Tj(°C)

300

350

400

450

500

550

600

th(c-a)(°C/W)

th(j-c)=1.0 °C/W

J=150 °C

VDRM/VRRM(V)

th(j-a)(°C/W)

D²PAK

SCU(cm²)

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