2N7002L 6V N-channel MOSFET

1 Features

• Low On-Resistantance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Operating Junction and Storage Temperature:

– –65°C to +150°C

• 2kV Gate-Source ESD Rating

2 Applications

• Personal Electronics

• Building Automation

• Industrial Automation

3 Description

This device is a N-channel Field-Effect Transistor in a

plastic package. It has been designed to minimize the

on-state resistance while maintaining fast switching

performance.

Package Information

PART NUMBER PACKAGE(1)

BODY SIZE (NOM)

2N7002L

DBZ (SOT-23)

2.92mm × 2.37mm

DCK (SOT-SC70)

2.10mm x 2.00mm

DBV (SOT-23)

2.90mm x 2.80mm

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Drain

Gate

Source

Simplified Block Diagram

2N7002L

SLVSJE8A – DECEMBER 2025 – REVISED FEBRUARY 2026

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.