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STP30NF20 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP30NF20
功能描述  N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET™Power MOSFET
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP30NF20 数据表(HTML) 5 Page - STMicroelectronics

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STP30NF20 - STW30NF20 - STB30NF20
Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=100V, ID=15A,
RG=4.7Ω, VGS=10V
(see Figure 16)
35
15.7
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=100V, ID=15A,
RG=4.7Ω, VGS=10V
(see Figure 16)
38
8.8
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
30
120
A
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=30A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=30A, di/dt = 100A/µs,
VDD=100 V, Tj=25°C
155
0.96
12.4
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=30A, di/dt = 100A/µs,
VDD=100 V, Tj=150°C
194
1.42
14.6
ns
µC
A



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