STP60NF06 datasheet(3/12 Pages) STMICROELECTRONICS

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STP60NF06

Electrical ratings

3/12

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate- source voltage

±20

Drain current (continuos) at TC = 25°C

Drain current (continuos) at TC = 100°C

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

240

PTOT

Total dissipation at TC = 25°C

110

Derating factor

0.74

W/°C

dv/dt (2)

ISD ≤60A, di/dt ≤400 A/µs, VDD ≤48V, Tj ≤Tjmax

Peak diode recovery voltage slope

7.5

V/ns

Tstg

Storage temperature

– 55 to 175

°C

Max. operating junction temperature

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.36

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=30V)

370

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