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STGD18N40LZ 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGD18N40LZ
功能描述  EAS 180 mJ - 400 V - internally clamped IGBT
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD18N40LZ 数据表(HTML) 5 Page - STMicroelectronics

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STGD18N40LZ - STGB18N40LZ
Electrical characteristics
5/18
Table 5.
Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0
490
pF
Coes
Output capacitance
90
pF
Cres
Reverse transfer capacitance
6.5
pF
Qg
Gate charge
VCE = 280 V, IC = 10 A,
VGE = 5 V
23
nC
Table 6.
Switching on/off
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Resistive load
Turn-on delay time
Rise time
VCC = 14 V, IC = 10 A
RG = 1 kΩ, VGE = 5 V
1
5.8
µs
µs
td(on)
tr
Resistive load
Turn-on delay time
Rise time
VCC = 14 V, IC = 10 A
RG = 1 kΩ, VGE = 5 V,
TC = 150 °C
1
5.9
µs
µs
td(off)
tf
dv/dt
Inductive load
Turn-off delay time
Fall time
Turn-off voltage slope
VCC = 300 V, L = 1 mH
RG = 1 kΩ, VGE = 5 V
14
6.7
90
µs
µs
V/µs
td(off)
tf
dv/dt
Inductive load
Turn-off delay time
Fall time
Turn-off voltage slope
VCC = 300 V, L = 1 mH
RG = 1 kΩ, VGE = 5 V
TC = 150 °C
15
9.8
80
µs
µs
V/µs



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