STB30NF10 datasheet(4/16 Pages) STMICROELECTRONICS

部件名	STB30NF10

功能描述	N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STB30NF10 - STP30NF10 - STP30NF10FP

4/16

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS =0

100

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max ratings

VDS = max ratings,

TC = 125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 15A

0.038

0.045

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward

transconductance

VDS = 15V, ID = 15A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

1180

180

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 50V, ID = 15A

RG =4.7Ω VGS = 10V

(see Figure 15)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 80V, ID = 12A,

VGS = 10V

(see Figure 16)

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