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V1.0

04/05/22

Power Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

sg.element14.com/b/multicomp-pro

Description

Designed for use in general purpose amplifier and switching application.

Features

• DC Current Gain -hFE = 30(Min)@ IC= 0.3A

• Collector–Emitter Sustaining Voltage

VCEO(SUS) = 60V(Min.)

• Complement to Type TIP42A

• Minimum Lot-to-Lot variations for robust device performance and reliable operation

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

Emitter-Base Voltage

VEBO

5

Collector Current-Continuous

IC

6

A

Collector Current-Peak

ICM

10

Base Current- Continuous

IB

2

Collector Power Dissipation @TC=25°C

PC

65

Watts

Junction Temperature

Tj

150

°C

Storage Temperature

TSTG

-65 to +150

Characteristic

Symbol

Value

Unit

Thermal Resistance Junction to Case

Rth j-c

1.67

°C/W

Thermal Characteristics

Electrical Characteristics (TC = 25°C unless otherwise specified

Characteristic

Symbol

Min.

Max.

Unit

Off Characteristics

Collector-Emitter Sustaining Voltage

(Ic= 10mA, Ib=0)

VCEO(SUS)

60

-

V

Collector Cut-off Current

(VcB= 60V, IE=0)

ICBO

0.4

mA

Collector Cut-off Current

(VcE= 30V, IB=0)

ICEO

0.7

Emitter Cut-off Current

VEB=5V, IC=0

IEBO

1