M95256-R datasheet(42/43 Pages) STMICROELECTRONICS

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Revision history

M95256, M95256-W, M95256-R

42/43

15-Oct-2007

M95256 with device grade 6 temperature range removed.

Section 3.7: VSS ground added, Section 3.8: Supply voltage (VCC)

modified. Small text changes.

Section 5.4: Write Status Register (WRSR), Section 5.5: Read from

Memory Array (READ) and Section 5.6.1: ECC (error correction code) and

Write cycling updated.

Note 2 below Figure 12: Bus master and memory devices on the SPI bus

removed, replaced by explanatory paragraph.

TLEAD added to Table 6: Absolute maximum ratings.

Test conditions modified for ICC0 and ICC1, and VIH min modified in

Table 16: AC characteristics (M95256, device grade 3).

tW modified and “preliminary data” note removed in Table 19: AC

characteristics (M95256-R).

Blank option removed below Plating technology, process A modified and

process V removed in Table 23: Ordering information scheme.

Table 24: Available M95256x products (package, voltage range,

temperature grade) added.

SO8N and SO8W package specifications updated (see Section 10:

Package mechanical data). Package mechanical data: inches calculated

from mm and rounded to 3 decimal digits.

27-Mar-2008

Section 3.8: Supply voltage (VCC) modified. Small text changes.

Frequency corrected on page 1.

VIL and VIH modified in Table 15: DC characteristics (M95256-R).

AB Process added to Table 23: Ordering information scheme.

Table 25.

Document revision history (continued)

Date

Revision

Changes

M95256-R 数据表(PDF) 42 Page - STMicroelectronics