AT45DB641E datasheet(74/78 Pages) RENESAS

74 / 78 page

DS-AT45DB641E-027 Rev. O

Page 74

6/30/23

AT45DB641E Datasheet

28. Ordering Information (Standard DataFlash Page Size)

1. Contact Renesas Electronics for mechanical drawing or Die Sales information.

Ordering Code

Package

Lead

Finish

Page

Size

Operating

Voltage

fSCK

Device Grade

AT45DB641E-SHN-B

8-lead 208-mil wide, Plastic

Gull Wing Small Outline

(EIAJ SOIC)

NiPdAu

264

1.7 V to 3.6 V

85 MHz

Industrial

(-40

°C to 85 °C)

AT45DB641E-SHN-T

AT45DB641E-SHN2B-T

256

AT45DB641E-MHN-Y

8-pad (5 x 6 x 0.6 mm

body), Thermally Enhanced

Plastic Ultra Thin Dual Flat

No-lead (DFN)

264

AT45DB641E-MHN-T

AT45DB641E-MHN2B-T

256

AT45DB641E-MWHN-Y

8-pad (6 x 8 x 1.0 mm

body), Thermally Enhanced

Plastic Very Thin Dual Flat

No-lead (DFN)

264

AT45DB641E-MWHN-T

AT45DB641E-MWHN2B-T

256

AT45DB641E-DWF[1]

Die in Wafer Form

264

Device Grade

H = Green, NiPdAu lead finish

U = Green, Matte Sn or Sn alloy

Designator

Product Family

Device Density

Shipping Carrier Option

Package Option

641 = 64-Mbit

Device Generation

45DB = DataFlash

B = Bulk (tubes)

T = Tape and reel

Y = Trays

Operating Voltage

N = 1.7 V to 3.6 V

S = 8-lead, 208-mil wide SOIC

M = 8-pad, 5 x 6 x 0.6 mm DFN

MW = 8-pad, 6 x 8 x 1.0 mm DFN

DWF = Die in Wafer Form

A T45DB641E-SHN2B-T

Page Size Option

blank = Standard (264 bytes/page)

2B = Binary (256 bytes/page)

AT45DB641E 数据表(PDF) 74 Page - Renesas Technology Corp

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