TS861, TS862, TS864

Electrical characteristics

Doc ID 6422 Rev 3

5/19

Note:

Limits are 100% production tested at 25 °C. Limits over temperature are guaranteed through

correlation and by design.

Table 4.

Electrical characteristics at VCC = 5 V, Tamb = 25 °C

(unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

VIO

Input offset voltage

TS861/2/4

Tmin < T < Tmax

TS861/2/4A

Tmin < T < Tmax

3

3

15

18

7

10

mV

ΔVIO

Input offset voltage drift

6

μV/°C

IIO

Input offset current(1)

Tmin < T < Tmax

1.

Maximum values including unavoidable inaccuracies of the industrial test.

1

150

300

pA

IIB

Input bias current(1)

Tmin < T < Tmax

1

300

600

pA

VOH

High level output voltage

ISOURCE =5 mA

Tmin < T < Tmax

4.6

4.45

4.8

V

VOL

Low level output voltage

ISINK =5mA

Tmin < T < Tmax

0.2

0.4

0.55

V

AVD

Large signal voltage gain(2)

2.

Design evaluation.

240

dB

CMR

Common mode rejection ratio

0 < VICM < 5 V

70

dB

SVR

Supply voltage rejection ratio

2.7 < VCC < 10 V

80

dB

ICC

Supply current per comparator

No load, output low

No load, output high

6

8

12

14

μA

TPLH

Propagation delay from output low to output high

VICM = 2.5 V, f = 10 kHz, CL =50pF

Overdrive = 10 mV

Overdrive = 100 mV

2

0.5

µs

TPHL

Propagation delay from output high to output low

VICM = 2.5 V, f = 10 kHz, CL =50pF

Overdrive = 10 mV

Overdrive = 100 mV

2

0.4

µs

TF

Fall time

f= 10 kHz, CL = 50 pF, overdrive = 100 mV

20

ns

TR

Rise time

f= 10 kHz, CL = 50 pF, overdrive = 100 mV

20

ns