BU941ZPFI datasheet(1/2 Pages) ISC

部件名	BU941ZPFI

功能描述	Silicon NPN Darlington Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

Silicon NPN Darlington Power Transistor

BU941ZPFI

www.iscsemi.com

1

DESCRIPTION

·

Collector–Emitter Sustaining Voltage—

: V(BR)CEO = 350V(Min.)

·

DC Current Gain—

: hFE = 300(Min) @ IC= 5.0A

APPLICATIONS

·

High Ruggedness Electronic Ignitions

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

350

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak, (tp < 5ms)

30

A

IB

Base Current

1

A

IBM

Base Current-Peak, (tp < 5ms)

5

A

PC

Collector Power Dissipation

65

W

Ti

Junction Temperature

-65~175

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.3

℃

/W

类似零件编号 - BU941ZPFI

制造商	部件名	数据表	功能描述
STMicroelectronics	BU941ZPFI	84Kb / 8P	HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON Jan-2000
STMicroelectronics	BU941ZPFI	496Kb / 9P	HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS 03-Feb-2005
Savantic, Inc.	BU941ZPFI	148Kb / 3P	Silicon NPN Power Transistors
STMicroelectronics	BU941ZPFI	486Kb / 11P	High voltage ignition coil driver NPN power Darlington transistors 22-Jan-2008
Savantic, Inc.	BU941ZPFI	149Kb / 3P	Silicon NPN Power Transistors

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