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IXTH20P50P 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTH20P50P 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc P-Channel MOSFET Transistor IXTH20P50P www.iscsemi.com 1 FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= -10V DESCRIPTION · High-Side Switches · Push Pull Amplifiers · DC Choppers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -500 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous -20 A IDM Drain Current-Single Pulse -60 A PD Total Dissipation 460 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.27 ℃ /W |
类似零件编号 - IXTH20P50P |
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类似说明 - IXTH20P50P |
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