AP4N06AI datasheet(1/7 Pages) APME

部件名	AP4N06AI

功能描述	60V N-Channel Enhancement Mode MOSFET

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制造商	APME [A POWER MICROELECTRONICS]

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AP4N06AI

60V N-Channel Enhancement Mode MOSFET

AP4N06AI RVE1.0

永源微電子科技有限公司

Description

The AP4N06AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=60V ID =4A

RDS(ON) < 85mΩ @ VGS=10V

（Type：62mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4N06AI

SOT23L

A36

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

4

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

2.1

A

IDM

Pulsed Drain Current2

20

A

EAS

Single Pulse Avalanche Energy3

11

mJ

IAS

Avalanche Current

15

A

PD@TC=25℃

Total Power Dissipation4

42

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

62

℃

/W

RθJC

Thermal Resistance Junction-Case1

3

℃

/W

类似零件编号 - AP4N06AI

制造商	部件名	数据表	功能描述
A POWER MICROELECTRONIC...	AP4N06MI	983Kb / 7P	60V N-Channel Enhancement Mode MOSFET REV1.0
A POWER MICROELECTRONIC...	AP4N06SI	1Mb / 7P	60V N-Channel Enhancement Mode MOSFET

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