AP4P15DF

-150V P-Channel Enhancement Mode MOSFET

AP4P15DF RVE1.0

永源微電子科技有限公司

P-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-150

-168

---

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-1A

---

620

780

mΩ

RDS(ON)

Static Drain-Source On-Resistance

VGS=-6V , ID=-0.5A

---

700

980

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-2.0

-3.0

-4.0

V

IDSS

Drain-Source Leakage Current

VDS=120V ,VGS=0V ,TJ=25

℃

---

---

1

uA

IDSS

Drain-Source Leakage Current

VDS=120V ,VGS=0V ,TJ=85

℃

---

---

30

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

12

---

Ω

Qg

Total Gate Charge

VDS=-75V , VGS=-10V , ID=-1A

---

10.8

---

nC

Qgs

Gate-Source Charge

---

3.1

---

nC

Qgd

Gate-Drain Charge

---

2.2

---

nC

Td(on)

Turn-On Delay Time

VDD=-30V , VGS=-10V ,

RG=6Ω,

ID=-1A

---

21

---

ns

Tr

Rise Time

---

16

---

ns

Td(off)

Turn-Off Delay Time

---

40

---

ns

Tf

Fall Time

---

18

---

ns

Ciss

Input Capacitance

VDS=-75V , VGS=0V , f=1MHz

---

706

---

pF

Coss

Output Capacitance

---

23

---

pF

Crss

Reverse Transfer Capacitance

---

13

---

pF

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =-50V,VGS =-10V,L=0.5mH,IAS =-5A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.