AP8G02LI

20V N+P-Channel Enhancement Mode MOSFET

AP8G02LI RVE1.0

永源微電子科技有限公司

N-Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

20

22

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=4.5V , ID=3A

---

28

35

mΩ

VGS=2.5V , ID=2A

---

32

40

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

0.5

0.75

1.2

V

IDSS

Drain-Source Leakage Current

VDS=16V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=16V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±

100

nA

gfs

Forward Transconductance

VDS=5V , ID=3A

---

10.5

---

S

Qg

Total Gate Charge (4.5V)

VDS=15V , VGS=4.5V , ID=3A

---

4.6

---

nC

Qgs

Gate-Source Charge

---

0.7

---

Qgd

Gate-Drain Charge

---

1.5

---

Td(on)

Turn-On Delay Time

VDD=10V , VGS=4.5V ,

RG=3.3Ω

ID=3A

---

1.6

---

ns

Tr

Rise Time

---

42

---

Td(off)

Turn-Off Delay Time

---

14

---

Tf

Fall Time

---

7

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

310

---

pF

Coss

Output Capacitance

---

49

---

Crss

Reverse Transfer Capacitance

---

35

---

IS

Continuous Source Current1,4

VG=VD=0V , Force Current

---

---

3.6

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25℃

---

---

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.