AP2N150MP

1500V N-Channel Enhancement Mode MOSFET

AP2N150MP RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 μA

1500 1650

V

ΔBVDSS/ ΔTJ Breakdown Voltage TemperatureCoefficient

ID=250μA, Referenced to25°C

0.74

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS =1500V, VGS=0V

1

μA

IDSS

Zero Gate Voltage Drain Current

VDS=720V, TC=125°C

10

μA

IGSSF

Gate-Body Leakage Current, Forward

VGS=30V, VDS=0V

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS=-30 V, VDS=0V

-100

nA

VGS(TH)

Gate Threshold Voltage

VDS=VGS, ID=250uA

3.0

3.5

5.0

V

RDS(On)

Drain-Source On-state Resistance

VGS=10 V, ID=4.5 A,

11.5

13

Ω

Ciss

Input Capacitance

VDS=25V, VGS=0V, f=1.0MHz

673

pF

Coss

Output Capacitance

56

pF

Crss

Reverse Transfer Capacitance

7.8

pF

td(on)

Turn On Delay Time

VDD=750V, ID=1.5A,

RG=25Ω

39

ns

tr

Rising Time

18

ns

td(off)

Turn Off Delay Time

119

ns

tf

Fall Time

64

ns

Qg

Total Gate Charge

VDS=1200V, ID=2A,

VGS=10V

30.5

nC

Qgs

Gate-Source Charge

3.5

nC

Qgd

Gate-Drain Charge

19

nC

ISM

Maximum Pulsed Drain-Source Diode Forward Current

2

A

VSD

Diode Forward Voltage

VGS=0V, IS =2A

1.4

V

trr

Reverse Recovery Time

VGS=0V, IS=1.5A, dIF/dt=100

A/μs Note4)

1100

ns

Qrr

Reverse Recovery Charge

5.12

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=10mH IAS=4.2A, VDD=50V, RG=25Ω, Starting TJ=25ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.